A Low-force MEMS Probe Solution for Single-touch Full-wafer DDR3 Memory Test
Published 13-Apr-2010
Abstract
Reducing the cost of test for next generation DRAM memory test requires ever-increasing levels of parallelism. As probe counts escalate beyond 50,000, the probecard and tester assembly must bear enormous forces to ensure planarity and proper scrub performance. Achieving a lower force MEMS probe alleviates this burden and extends the roadmap for probe count. Here we present the design and performance of a MEMS-based probe contactor with less than half the probe force of the competing designs.
In addition, we show the impact of probe force and overdrive on the overall mechanical performance of a single touchdown 30 min0mm probecard. With proper design of the supporting mechanics and the resulting improvements in planarity, overdrives may be reduced for even greater benefit. Other challenges associated with single touch, high probe density DDR3 designs will be presented.
Abstract
Reducing the cost of test for next generation DRAM memory test requires ever-increasing levels of parallelism. As probe counts escalate beyond 50,000, the probecard and tester assembly must bear enormous forces to ensure planarity and proper scrub performance. Achieving a lower force MEMS probe alleviates this burden and extends the roadmap for probe count. Here we present the design and performance of a MEMS-based probe contactor with less than half the probe force of the competing designs.
In addition, we show the impact of probe force and overdrive on the overall mechanical performance of a single touchdown 30 min0mm probecard. With proper design of the supporting mechanics and the resulting improvements in planarity, overdrives may be reduced for even greater benefit. Other challenges associated with single touch, high probe density DDR3 designs will be presented.
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