HSM3G

Economical at-speed mass production test solution for DDR3, DDR4 and beyond with 10-year system lifetime for multiple device generations

The Verigy V93000 HSM3G is the only test solution available today for low-cost volume production of DDR3, DDR4 and beyond. HSM3G offers highly accurate at-speed testing and is scalable to 2.9Gbps. A multi-generation growth path via economical upgrades up to 6.8Gbps date rate provides a unique lifetime value and outstanding return of investment.

Lowest cost of test for mainstream DDR3 & DDR4 up to 2.9Gbps
HSM3G provides highly accurate at-speed I/O and at-speed core access test scalable up to 2.9Gbps, covering the entire DDR3 generation and at least the first two future mainstream speed bins that are expected for DDR4, which are 2.133 Gbps and 2.667 Gbps.

HSM3G achieves native 2.9Gbps data rate, without pin-muxing or double clocking, which guarantees true 256-sites parallel test over the entire speed range without test-time penalties and without compromises to accuracy, functionality, test coverage or yield.

Due to its inherently superior memory ATE per-pin throughput, the V93000 HSM3G provides test-time savings of up to 20 percent. It delivers fully parallel pattern execution, as well as fully parallel DC tests and eye-width measurements, which enables the industry’s best multi-site efficiency. Combined with a competitive price point, the V93000 HSM3G test system provides lowest cost of test for the targeted DRAM speed classes.

Multi-generation test platform with 10 year lifetime via economical upgrades
A unique benefit of the V93000 HSM3G is its future-ready upgradeability to HSM4000 and HSM6800, which gives access to data rates even beyond those of the DDR3/4 generation, featuring investment protection for DDR3, DDR4 and future mainstream DRAM technologies. This ensures more than 10 years of cutting-edge lifetime value over at least three mainstream DRAM device generations and unmatched long-term test economics for outstanding return on investment.

The V93000 HSM platform is future-ready in terms of speed and functionality, offering the most complete feature-set available on the high-speed memory test market. Its programmable at-speed APG per-pin with support for data bus inversion (DBI) and cyclic redundancy check (CRC) data generation enables to test the advanced memory technology features, ensuring best test quality and yield even for the future DDR4 main memory standard.

Product Overview

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HSM 3G
HSM3G
 Features & Benefits
 Key Specifications


Feature Benefit
True 2.9Gbps APG and I/O Data Rate on 256-sites DDR3 at single pass   Addresses within one system:
  • all mainstream DDR3 speed bins
  • AND high-end Gamer DDR3
  • AND first two mainstream DDR4 volume bins
Avoids "double clocking" or "pin muxing" for best throughput, test coverage and yield
     
Three performance options available via flexible license upgrade:
  • 2.3Gbps
  • 2.5Gbps
  • 2.9Gbps
 

Flexibility and scalability in performance and cost, tailor-made to meet test requirements.

Attractive entry price and low upgrade cost

     
Upgradeable to HSM4000 and HSM6800 via ASIC exchange (upgrade of key speed-binned test-processor components)  

Unique 10-year lifetime through cost efficient upgrades covering three device generations, DDR3, DDR4 and future mainstream technologies.

Safest investment: upgradable to 6.8Gbps today

     
Memory ATE per-pin
  • Per pin APG
  • Per pin pattern memory
  • Per pin PMU
 

Fully parallel pattern execution, DC tests and eye-width measurements for best multi-site efficiency.

Up to 20% throughput advantage resulting in lowest cost-of-test.

     
Simultaneous Bi-directional (SBD)  

At-speed test of I/O pins on a single transmission line without data bus collisions.

Full at-speed test coverage, shortest test-times (no padding), lowest cost-of test.

     
Programmable at-speed APG per-pin
  • CRC Data Generation
  • ABI / DBI Support
 

Enables most complex memory test patterns for any fault algorithm to ensure required test quality and fast yield learning.

Ready to test advanced I/O capabilities of current and next generation memory architectures.

     



Specification Value
Maximum Test Speed   2.3/2.5/2.9Gbps (options)
     
Example Parallelism   64-sites GDDR5
256-sites DDR3
     
Special Functions:   Simultaneous Bi-directional (SBD)
Real-Time Strobe Adaptation
Embedded Search Support
Programmable Signal Equalization
Jitter Injection & Measurement
CRC Data Generation
ABI / DBI Support